| PART |
Description |
Maker |
| 2N2904 JANTX2N2905A JAN2N2904 JAN2N2905 2N2904A 2N |
600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
PNP Transistor
PNP SWITCHING SILICON TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
3 Pin 1.5A Fixed 12V Positive Voltage Regulator 3-TO-220 0 to 125 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
|
MICROSEMI CORP-LAWRENCE
http://
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| SF18 SF12-AP SF12-BP SF14-AP SF16-AP |
1.0 Amp Super Fast Recovery Rectifiers 50 to 600 Volts
1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components
|
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 1N4937G 1N4937GL 1N4936G 1N4936GL 1N4935G 1N4935GL |
TRANSISTOR NPN 45V SOT23 1 A, 600 V, SILICON, SIGNAL DIODE
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE
|
Won-Top Electronics Co., Ltd.
Diodes, Inc.
DIODES[Diodes Incorporated]
|
| CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
| BY133 1N4005 1N4004 |
Silicon Rectifier Diodes 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
EIC discrete Semiconductors
Electronics Industry Public Company Limited
EIC SEMICONDUCTOR INC
|
| JANS1N6663 |
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 600; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
|
| BYW27-200TR BYW27-1000TR BYW27-100TR BYW27-400AMP |
1 A, 200 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2
1 A, 1000 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2
1 A, 100 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2
1 A, 400 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2
|
Vishay Beyschlag
TE Connectivity, Ltd.
TOKO, Inc.
|
| FS1J-LTP |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
|
MICRO COMMERCIAL COMPONENTS
|
| GP08J/56 GP08G/66 GP08G/64 |
0.8 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
0.8 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
|
Vishay Beyschlag
VISHAY SEMICONDUCTORS
|
| 10DRA60 |
FRD - 1A 600A 120ns 1 A, 600 V, SILICON, SIGNAL DIODE
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
|
